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Landau Subband and Landau Level Properties of AA-Stacked Graphene Superlattice

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Magneto-electronic properties of AA-stacked graphene superlattice (simple hexagonal graphite) are studied by the tight-binding model with an exact diagonalization method. The Landau subbands (LSs) with strong energy dispersions exist along k^ z and each subband possesses two band-edge states. Density of states reflects main features of the LSs, such as asymmetric prominent peak structures and the semimetallic behavior. Under the AA-stacked configuration, the LS wave functions are characterized by two sublattices, a and b. The quantum number (nc,v ) of each LS, which corresponds to the number of zero points in the dominating carrier distributions, is determined by a certain sublattice and independent of kz . For each LS, the difference between the number of zero point of the a and b sublattices is fixed and equals one. Furthermore, a reliable approximate solution of the low-lying LS energy is obtained. Through observing this solution, the dependence of the LS energy on the field strength and quantum number, kz -dependent energy spacing between two LSs, and the values of atomic hopping integrals are reasonably determined. A comparison of the AA-stacked graphene superlattice and monolayer graphene demonstrates that they possess some similar magneto-electronic properties.
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Document Type: Research Article

Publication date: 01 March 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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