@article {Cheng:2012:1533-4880:2462,
title = "Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2012",
volume = "12",
number = "3",
publication date ="2012-03-01T00:00:00",
pages = "2462-2466",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000003/art00101",
doi = "doi:10.1166/jnn.2012.5807",
author = "Cheng, Hui-Wen and Hwang, Chih-Hong and Chao, Ko-An and Li, Yiming",
abstract = "Comparison of two different implantation processing techniques for random dopant (RD)-induced threshold voltage fluctuation (V
th) in 15-nm metal-oxide-semiconductor (MOS) devices is reported. Implantations of flash lamp annealing and laser spike annealing are
simulated using a kinetic Monte Carlo (KMC) technique. The KMC generated distributions are mapped into device channel for three-dimensional quantum mechanical transport simulation to estimate threshold voltage fluctuation. The main results of this study show that the laser spike annealing
could achieve 30% reduction of RDF-induced V
th for low-power application of 15-nm MOS devices, compared with flash lamp annealing.",
}