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Charge Carrier Transport and Digital Data Transmission Performance In Sub-20 nm Diameter Indium Antimonide Nanowires

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We investigated the data transmission performance of indium antimonide (InSb) nanowires synthesized on (100) type substrates using chemical vapor deposition and having diameters of 20 nm and below using the eye diagram approach of the transmission line. NW interconnect parameters including the bit error rate, quality factor, signal attenuation and maximum bandwidth have been extracted. Nanowires can sustain data rates of up to 10 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system, and the data rate is directly proportional to nanowire diameter.
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Document Type: Research Article

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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