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Thermoelectric Properties of Sb2Te3 Thin Films by Electron Beam Evaporation

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This study applies the thermoelectric grains of Sb2Te3 on conductive glass to evaporate Sb2Te3 thin films by the electron beam evaporation method. Through experimental tests with different evaporation process parameters and film annealing conditions, thin films with better Seebeck coefficient, resistivity (ρ) and power fact (PF) can be obtained. Experimental results show that when thin films are annealed, their defects can be decreased accordingly, and carrier mobility can be enhanced to further elevate the conductivity of thin films. When the substrate temperature is set at 200 °C to fabricate Sb2Te3 thin films by the evaporation process and by annealing at 220 °C for 60 minutes, the Seebeck coefficient of Sb2Te3 thin films increase from 87.6 μV/K to 177.7 μV/K; resistivity falls from 6.21 mΩ-cm to 2.53 mΩ-cm and PF can achieve the maximum value of 1.24 10−3 W/K2 m. Finally, this study attempts to add indium (In) to Sb2Te3 thin films. Indium has been successfully fabricated In3SbTe2 thin films. This study also analyzes the effects of In on the thermoelectric properties of In3SbTe2 thin films.


Document Type: Research Article

Publication date: August 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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