Antimony Selenide Phase-Change Nanowires for Memory Application
Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly
switched between high-resistance (∼10 MΩ) and low-resistance (∼1 kΩ) states which are attributed to amorphous and crystalline states, respectively.
Keywords: ANTIMONY SELENIDE; NANOWIRE; NONVOLATILE MEMORY; PHASE-CHANGE MEMORY
Document Type: Research Article
Publication date: February 1, 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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