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Synthesis of Cobalt-Based Nanocrystal Layer in Silicon Dioxide for Nonvolatile Memory Applications

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Cobalt silicide (CoSi) nanocrystal (NC) layer distributed within narrow spatial region is synthesized by thermal annealing of a sandwich structure comprised of a thin cobalt (Co) film sandwiched between two silicon-rich oxide (SiO x ) layers. It is shown that the size of the CoSi NCs can be controlled by varying the Co film thickness, an increase in the size with increasing thickness. Capacitance–voltage (CV) measurements on a test metal/oxide/semiconductor (MOS) structure with floating gate based on CoSi NCs of 3.8 nm in diameter and 1.4×1012 cm2 in density are shown to have CV characteristics suitable for nonvolatile memory applications, including a CV memory window of about 9.5 V for sweep voltages between −15 V and +8, a retention time >108 s, and an endurance >106 program/erase cycles.
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Keywords: COBALT SILICIDE NANOCRYSTAL; NONVOLATILE MEMORY

Document Type: Research Article

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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