@article {Hong:2011:1533-4880:148,
title = "Nonvolatile Floating-Gate Memories Using Zr and ZrO2 Nanodots",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2011",
volume = "11",
number = "1",
publication date ="2011-01-01T00:00:00",
pages = "148-151",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00018",
doi = "doi:10.1166/jnn.2011.3136",
keyword = "ZR NANODOTS, DOUBLE OXIDE BARRIER, NONVOLATILE MEMORIES",
author = "Hong, Seung Hui and Kim, Min Choul and Oh, Hyoung Taek and Choi, Suk-Ho and Kim, Kyung Joong",
abstract = "Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy
demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs by annealing. The memory window that is estimated by capacitancevoltage curves increases up to a maximum value of 5.8 V with increasing Zr amount up to 6 monolayers
for the annealed samples. The memory window and the charge-loss rate at the programmed state are smaller before annealing, which is explained with reference to double oxide barriers of SiO2 and ZrO2.",
}