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Nano Si Superlattices for the Next Generation Solar Cells

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We present a study on amorphous SiO/SiO2 superlattice formation on Si substrate held at room temperature and annealed in the temperature range 600–1100 °C. Grazing-incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity were used to study such samples. Amorphous SiO/SiO2 superlattices were prepared by high vacuum physical vapor deposition of 4 nm thin films of SiO and SiO2 (10 layers each) from corresponding targets on silicon substrate. Rotation of the Si substrate during evaporation ensured homogeneity of the films over the whole substrate. We observed that the inhomogeneities introduced into the SiO and SiO2 layers during the deposition (evaporation) give rise to small angle scattering at lower annealing temperatures. After an initial SiO layer thickness reduction for 600 °C annealing, these thicknesses remain virtually unchanged up to 1000 °C, where they start to decrease again which leads to particle formation. Nevertheless, this compacting at low temperatures may lead to the seed formation in SiO layers that will facilitate later Si nanoparticles growth.
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Document Type: Research Article

Publication date: June 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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