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InAs Quantum Dot Clusters Grown on GaAs Droplet Templates: Surface Morphologies and Optical Properties

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GaAs nano-mounds formed by droplet epitaxy are used as templates for growth of self-assembled InAs quantum dot clusters (QDCs). These QDCs are found to contain an average of thirteen dots per cluster, of which there are two families of different sized quantum dots. Excitation intensity-dependent photoluminescence (PL) demonstrates that there is no lateral coupling between the two different size quantum dots. Lateral transfer of carriers is observed between different size quantum dots due to thermal activation as seen in their different temperature-dependent optical behaviors.
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Keywords: DROPLET EPITAXY; GAAS GROWTH TEMPLATE; INAS QUANTUM DOTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE

Document Type: Research Article

Publication date: 01 May 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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