@article {Luo:2009:1533-4880:1548,
title = "Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2009",
volume = "9",
number = "2",
publication date ="2009-02-01T00:00:00",
pages = "1548-1550",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2009/00000009/00000002/art00199",
doi = "doi:10.1166/jnn.2009.C199",
keyword = "NANOSTRUCTURE, ELECTRON BEAM LITHOGRAPHY, NICKEL SILICIDE, SELF-ALIGNED TECHNOLOGY",
author = "Luo, Qiang and Wang, Qiang and Gu, Chang-Zhi",
abstract = "An approach was proposed for fabricating nickel silicide nanostructures by self-aligned transformation from site-specific silicon nanostructures on the silicon-on-insulator substrate. The silicon nanostructures were firstly fabricated through the sequence of electron beam lithography
and pattern transfer to silicon with reactive ion etching. The line-width of structures was shrunk by focused ion beam milling technology. Then nickel silicide nanostructures with the line-width of less than 50 nm were obtained on the insulator separation layer by sequential processes of nickel
film deposition, rapid thermal annealing and wet-chemical etching. It was shown that 550 \textdegreeC was an optimal annealing temperature to form NiSi nanostructures with low resistivity of about 15 \textperiodcenteredcm. As-formed metallic NiSi nanowire showed stable electrical properties
at elevated temperature.",
}