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Building Ge Nanowires on As-Partially-Adsorbed Si(001) 2 × 1 Surface: An Ab Initio Study

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Through ab initio simulations, we demonstrate a new scheme for self-assembling semiconductor nanostructures on the Si substrate by controlling the surface stress or strain. The scheme entails a two-step process: (a) an adjusting step for the lattice constants of Si surface using the partial adsorption of surface-active species on Si, followed by (b) self-assembly process of difficultly-attached atoms on the exposed Si surface. Using this scheme, we construct Ge-dimer nanowires, exhibiting typical semiconductor characteristic, on the As-partially-adsorbed Si(001) surface. This is beneficial to realize nanoscale Si-based devices for miniaturization.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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