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Design and Performance of EUV Resist Containing Photoacid Generator for Sub-100 nm Lithography

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To fulfill the SIA roadmap requirements for EUV resists, the development of entirely new polymer platforms is necessary. In order to address issues like Line Edge Roughness (LER) and photospeed, we have developed a novel chemically amplified photoresist containing a photoacid generator (PAG) in the main chain of the polymer. The incorporation of a cationic PAG unit, phenyl methacrylate dimethylsulfonium nonaflate (PAG), in the resist backbone showed increased sensitivity, when compared with analogous blend PAG resist samples. In addition, the overall lithographic performance improved by using the counter anion (nonaflate) in the PAG units. The newly synthesized polymer bound PAG resist, poly (4-hydroxystyrene-co-2-ethyl-2-adamantyl methacrylate-co-PAG) showed sub-50 nm features using EUV Lithography.
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Document Type: Short Communication

Publication date: July 1, 2005

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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