@article {Fonoberov:2003:1533-4880:253,
title = "Interplay of Confinement, Strain, and Piezoelectric Effects in the Optical Spectrum of GaN Quantum Dots",
journal = "Journal of Nanoscience and Nanotechnology",
parent_itemid = "infobike://asp/jnn",
publishercode ="asp",
year = "2003",
volume = "3",
number = "3",
publication date ="2003-06-01T00:00:00",
pages = "253-256",
itemtype = "ARTICLE",
issn = "1533-4880",
eissn = "1533-4899",
url = "https://www.ingentaconnect.com/content/asp/jnn/2003/00000003/00000003/art00010",
doi = "doi:10.1166/jnn.2003.169",
keyword = "CONFINEMENT, GAN QUANTUM DOTS, STRAIN, PIEZOELECTRIC EFFECT",
author = "Fonoberov, Vladimir A. and Pokatilov, Evghenii P. and Balandin, Alexander A.",
abstract = "We theoretically investigated excitonic states, energy and oscillator strength of optical transitions in GaN quantum dots characterized by different size, shape, interface, and substrate. On the basis of our multi-band model we determined that the piezoelectric field-induced red shift of the ground state transition, observed in recent experiments, can manifest itself only in strained GaN/AlN dots with the dot height larger than 3 nm. It was also established that the oscillator strength of the red-shifted transitions is small (< 0.05) and decreases fast with increasing the dot size, while the strength of ground state transitions in c-GaN/c-AlN and GaN/dielectric dots is large (~0.4-0.7) and almost independent of the dot size.",
}