TCAD Assessment of Dielectrics and Channel Doping Impact in Junctionless Double Gate MOSFET
In this paper the performance of junctionless double gate MOSFET has been analyzed in the presence of high-k, low-k dielectrics and the impact of channel doping has been observed by using Silvaco TCAD with ATLAS device simulator and compared with the conventional double gate MOSFET. The junction free architecture of junctionless DG MOSFET reduces the short channel effects and manufacturing cost. The high doping concentration of the junctionless DG MOSFET degrades the carrier mobility causing reduction in the drive current and transconductance in comparison to the conventional DG MOSFET. However, the usage of high-K dielectrics shows a remarkable improvement in the transconductance of the device, and interestingly, a sufficient high doping has produced a good drive current in junctionless DG MOSFET.
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Document Type: Research Article
Publication date: August 1, 2015
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