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Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors

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An analytical model for the current–voltage characteristics of kink effect on AlGaN/GaN high electron mobility transistors is presented. At first, we have developed the conventional charge-control model for the current–voltage characteristics of AlGaN/GaN HEMTs without considering any defect. In a second step, we included the defects concentration in the current–voltage characteristic expressions. In this simulation, the kink effect is mainly due to deep lying defects. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which allows to adjust some of electron transport parameters in order to optimize the output current. As has been found, to affirm that this anomaly is due to the presence of defects, our results agree well with published experimental data.
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Document Type: Research Article

Publication date: June 1, 2013

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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