Skip to main content
padlock icon - secure page this page is secure

Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors

Buy Article:

$106.72 + tax (Refund Policy)

An analytical model for the current–voltage characteristics of kink effect on AlGaN/GaN high electron mobility transistors is presented. At first, we have developed the conventional charge-control model for the current–voltage characteristics of AlGaN/GaN HEMTs without considering any defect. In a second step, we included the defects concentration in the current–voltage characteristic expressions. In this simulation, the kink effect is mainly due to deep lying defects. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which allows to adjust some of electron transport parameters in order to optimize the output current. As has been found, to affirm that this anomaly is due to the presence of defects, our results agree well with published experimental data.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: ALGAN/GAN; CURRENT–VOLTAGE CHARACTERISTICS; DEEP DEFECTS; HIGH ELECTRON MOBILITY TRANSISTORS; KINK EFFECT

Document Type: Research Article

Publication date: June 1, 2013

More about this publication?
  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
  • Editorial Board
  • Information for Authors
  • Submit a Paper
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more