Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors
An analytical model for the current–voltage characteristics of kink effect on AlGaN/GaN high electron mobility transistors is presented. At first, we have developed the conventional charge-control model for the current–voltage characteristics of AlGaN/GaN HEMTs without considering any defect. In a second step, we included the defects concentration in the current–voltage characteristic expressions. In this simulation, the kink effect is mainly due to deep lying defects. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which allows to adjust some of electron transport parameters in order to optimize the output current. As has been found, to affirm that this anomaly is due to the presence of defects, our results agree well with published experimental data.
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Document Type: Research Article
Publication date: June 1, 2013
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