An Analytical Threshold Voltage Model for the Vertical Sidewall Mosfet with a Curved-Channel
We present a new analytical model for surface potential and threshold voltage (V th) for Single Gate Vertical MOSFET with curved-channel. The influence of the corner effect in single gate vertical MOSFET is studied using two-dimensional Poisson equation in both planar and spherical geometries. The electric field of the channel in single gate vertical MOSFET and impact on the threshold are studied. The relationship between the threshold voltage (V th), channel length (L), channel concentration (N A ), and the curved corner radius (r 0) is given. The comparison with planar devices is provided. The characterization of single gate MOSFETs with curved-channel devices is attributed to the corner effect of the surface potential along the channel. The relationship between the minimum surface potential and the structure parameters is theoretically analyzed. Results confirm that the curved-channel of device gives contribution of the threshold voltage value and the Short Channel Effect (SCE) reduction of the device due to effects of the corner and gate oxide capacitance. These results show a good agreement with the numerical 2-D TCAD simulations.
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Document Type: Research Article
Publication date: November 1, 2011
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- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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