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Use of Laser Trimming for the Fabrication of High Precise np Compensation-Doped Polycrystalline Silicon Thin-Film Resistors

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In this work, the design and fabrication of np compensation-doped polycrystalline silicon (poly-Si) thin-film resistors (TFRs) using the laser trimming (LT) method are presented. A novel method that uses LT simulation on a compensation-doped poly-Si film is proposed to obtain a highly precise resistance. The morphology and stability of the TFR were also studied. Experimental results show that the current-crowding distribution of the TFRs improved and that a high resistor value was obtained. The influence of the device structural parameters, used for device geometry, was investigated in detail. The mathematical simulation and fabrication technology developed in the present study is applicable to the realization of precise TFRs with a high-value poly-Si resistor and an adjustable poly-Si resistor value.
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Document Type: Research Article

Publication date: November 1, 2011

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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