Use of Laser Trimming for the Fabrication of High Precise n–p Compensation-Doped Polycrystalline Silicon Thin-Film Resistors
In this work, the design and fabrication of n–p compensation-doped polycrystalline silicon (poly-Si) thin-film resistors (TFRs) using the laser trimming (LT) method are presented. A novel method that uses LT simulation on a compensation-doped poly-Si film is proposed to obtain a highly precise resistance. The morphology and stability of the TFR were also studied. Experimental results show that the current-crowding distribution of the TFRs improved and that a high resistor value was obtained. The influence of the device structural parameters, used for device geometry, was investigated in detail. The mathematical simulation and fabrication technology developed in the present study is applicable to the realization of precise TFRs with a high-value poly-Si resistor and an adjustable poly-Si resistor value.
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Document Type: Research Article
Publication date: November 1, 2011
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