The Photoemission from Quantum Wells, Wires and Carbon Nanotubes: Simplified Theory and Relative Comparison

We investigate the photoemission from quantum wells (QWs) in ultrathin films (UFs) and quantum well wires (QWWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k·p formalism. The results of quantum confined III–V compounds form the special cases of our generalized analysis. The photoemission has also been studied for quantum confined II–VI, n-GaP, n-Ge, PtSb₂, stressed materials and Bismuth on the basis of respective dispersion relations. It has been found taking quantum confined CdGeAs₂, InAs, InSb, CdS, GaP, Ge, PtSb₂, stressed n-InSb and Bi that the photoemission exhibits quantized variations with the incident photon energy, changing electron concentration and film thickness, respectively, for all types of quantum confinement. The photoemission from CNs exhibits oscillatory dependence with increasing normalized electron degeneracy and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of photoemission from non-degenerate semiconductors and parabolic energy bands, leading to the compatibility test.