Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube FETs
A deeper understanding of quantum effects in nano-electronic devices helps to improve the performance and to develop new device types. Carbon nanotube-based transistors have been studied in recent years as potential alternatives to CMOS devices. The performance of carbon nanotube field-effect
transistors is studied using the non-equilibrium Green's function formalism. Electron–phonon interaction parameters, such as electron–phonon coupling strength and phonon energy, strongly depend on the chirality and the diameter of the carbon nanotube. Therefore, the steady-state
and dynamic response of carbon nanotube based transistors are studied for a wide range of electron–phonon interaction parameters.
Keywords: CARBON NANOTUBES; DEVICE SIMULATION; FIELD EFFECT TRANSISTORS; NON-EQUILIBRIUM GREEN'S FUNCTIONS
Document Type: Research Article
Publication date: June 1, 2008
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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