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Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.

Publisher: American Scientific Publishers

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Volume 5, Number 6, June 2008

A Special Issue

A Special Issue on Semiconductor Device Simulation
pp. 997-998(2)
Author: Gehring, Andreas

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Reviews

Semiconductor Device Modeling
pp. 999-1030(32)
Authors: Vasileska, D.; Mamaluy, D.; Khan, H. R.; Raleva, K.; Goodnick, S. M.

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Atomistic Simulation of Nanowire Transistors
pp. 1031-1045(15)
Authors: Luisier, Mathieu; Schenk, Andreas

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Quantum-Corrected Monte Carlo Simulation of Double Gate Silicon on Insulator Transistors
pp. 1046-1057(12)
Authors: Sampedro, Carlos; Gámiz, Francisco; Godoy, Andrés

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Physics and Simulation of Vertical-Cavity Surface-Emitting Lasers
pp. 1058-1071(14)
Authors: Witzigmann, Bernd; Bäcker, Alexandra; Odermatt, Stefan

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Impact of High-κ Gate Stacks on Transport and Variability in Nano-CMOS Devices
pp. 1072-1088(17)
Authors: Watling, J. R.; Brown, A. R.; Ferrari, G.; Barker, J. R.; Bersuker, G.; Zeitzoff, P.; Asenov, A.

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Research Articles

A Better Understanding of the Requirements for Predictive Modeling of Strain Engineering in nMOS Transistors
pp. 1106-1114(9)
Authors: Comparone, G.; Palestri, P.; Esseni, D.; Lucci, L.; Selmi, L.

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Three-Dimensional Simulations of Quantum Confinement and Random Dopants Effects in Nanoscale nMOSFETs
pp. 1115-1119(5)
Authors: Fiori, G.; Di Pascoli, S.; Iannaccone, G.

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Single-Walled Zig-Zag Carbon Nanotube Steady-State Transport Characteristics
pp. 1138-1144(7)
Authors: Akturk, Akin; Goldsman, Neil

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Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs
pp. 1145-1151(7)
Authors: Gnani, E.; Reggiani, S.; Gnudi, A.; Rudan, M.; Baccarani, G.

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Application-Driven Simulation of Nanoscaled CMOS Transistors and Circuits
pp. 1170-1182(13)
Authors: Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.

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Modeling and Simulation of Conduction Characteristics and Programming Operation in Nanoscaled Phase-Change Memory Cells
pp. 1183-1191(9)
Authors: Redaelli, A.; Ielmini, D.; Russo, U.; Lacaita, A. L.

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Addendum

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