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Pressure Induced Effective Exciton g-Factor in a Strained Ga0.2In0.8As/GaAs Quantum Dot

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The pressure induced exciton binding energy in a strained Ga0.2In0.8As/GaAs quantum dot is investigated taking into account the anisotropy, non-parabolicity of the conduction band and the geometrical confinement. The pressure related Γ-X crossover is taken into account. The optical transition energy as a function of dot radius is discussed in the presence of hydrostatic pressure. The dependence of the effective excitonic g-factor as functions of dot radius and the hydrostatic pressure is numerically measured. The interband optical heavy hole excitonic absorption spectra are obtained for various hydrostatic pressure in the Ga0.2In0.8As/GaAs quantum dot. It has been found that (i) Landé factor increases with the hydrostatic pressure, (ii) the resonant peak of absorption coefficient decreases with the magnitude above the transition pressure, 53 kbar (Γ-X crossover) and the exchange enhancement splitting not only increases with the geometrical confinement but also with the pressure values.
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Keywords: EXCITON; OSCILLATOR STRENGTH; QUANTUM DOT

Document Type: Research Article

Publication date: September 1, 2015

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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