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Magnetic Field Effect on the Electronic Structure of Doped GaAs Quantum Well and Superlattices

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The investigation of the energy level in a p-typed doped GaAs structure under the magnetic field was carried out theoretically using the effective mass for a uniform acceptor distribution. The structure was calculated by solving the Schrödinger and Poisson equations. It is evident from the result that the effect of magnetic field introduces valley splitting in electronic gas and further reduction in dimension leading to quantum well energy state hence changes the degree of confinement and localization. More so, the heavy-hole sub-bands contain more energy states than the light-holes sub-bands. The total population of heavy-holes increases with increasing magnetic field as the number of field states changes. This observation led to the derivation of the differential Hartress potential which was used to investigate 24 sub-bands.
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Document Type: Research Article

Publication date: December 1, 2014

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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