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Synthesis and Characterization Al x In1–x N Semiconductor Thin Films

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We report a theoretical and experimental investigation of Cr-doped Al x In1– x N. Density functional calculations predict that the isolated Cr t 2 defect level in AlN is 1/3 full, falls approximately at mid gap, and broadens into an impurity band for concentrations over 5%. Substitutional Al x In1– x N random alloys with 0.05 ≤ x ≤ 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc , of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.
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Keywords: ALUMINUM; INDIUM; NITROGEN; SEMICONDUCTOR THIN FILMS

Document Type: Research Article

Publication date: September 1, 2014

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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