Synthesis and Characterization Al x In1–x N Semiconductor Thin Films
We report a theoretical and experimental investigation of Cr-doped Al x In1– x N. Density functional calculations predict that the isolated Cr t 2 defect level in AlN is 1/3 full, falls approximately at mid gap, and broadens into an impurity band for concentrations over 5%. Substitutional Al x In1– x N random alloys with 0.05 ≤ x ≤ 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc , of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.
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Document Type: Research Article
Publication date: September 1, 2014
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