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Crystallographic Phase and Orientation Analysis of GaAs Nanowires by Electron Microscopy Methods

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The novel properties of semiconductor nanowires is a great challenge for nanoelectronics and photonics application. Depending on the band gap and size of particular semiconductor nanowires, the shift in absorption/emission is observed. GaAs nanowires are known to be one of such promising materials. In this article, GaAs nanowires (NWs), grown on GaAs [100] and [111] oriented films, were synthesized using gold nanocluster catalyst and metal organic chemical vapor deposition. Transmission electron microscopy (TEM), selected area electron diffraction (SAED), high resolution electron microscopy (HRTEM) and environmental scanning electron microscopy (ESEM) with energy dispersive spectroscopy (EDS) were employed for structural characterization of GaAs NWs samples (diameter and length of NWs and direction of growth). It was found that the diameter of the catalytic particles at the top of the NWs was the same as the diameter of the NWs. The direction of growth od GaAs NWs depended on support film orientation. In all observed samples HCP/wurtzite-type structure was found.
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Keywords: ENVIRONMENTAL SCANNING ELECTRON MICROSCOPY; GAAS NANOWIRES; HIGH RESOLUTION ELECTRON MICROSCOPY; SELECTED AREA ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY

Document Type: Research Article

Publication date: August 1, 2010

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  • Journal of Advanced Microscopy Research (JAMR) provides a forum for rapid dissemination of important developments in high-resolution microscopy techniques to image, characterize and analyze man-made and natural samples; to study physicochemical phenomena such as abrasion, adhesion, corrosion and friction; to perform micro and nanofabrication, lithography, patterning, micro and nanomanipulation; theory and modeling, as well as their applications in all areas of science, engineering, and medicine.
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