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Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

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In order to fabricate transparent pn devices, a good p-type transparent material is desired but it is difficult to obtain stable p-type conductivity. In this paper we investigate the effect of annealing temperature and annealing duration on the CuGaO2 thin film structure and diode electrical characteristic. A transparent p-type thin film CuGaO2 was successfully fabricated on the glass substrate by using RF sputtering deposition method and was annealed at different temperature and duration ranging from 200 °C to 500 °C and 1 to 4 hours at. CuGaO2 thin film crystalinity is improved at higher temperature and longer duration which is 500 °C and for 3 hours. The optical band gap of the thin film is approximately 3.3 eV. A transparent heterojuntion is fabricated on a transparent glass substrate with device structure ITO/n-ZnO/p-CuGaO2/Al and IV measurement shows the device that annealed for 1 hour at 500 °C show better rectification behavior which is 3.8 V.
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Keywords: RF Sputtering; Thin Film

Document Type: Research Article

Affiliations: 1: Faculty of Science and Natural Resources, Universiti Malaysia Sabah, Kota Kinabalu Sabah 88400, Malaysia 2: Faculty of Engineering, Universiti Malaysia Sabah, Kota Kinabalu Sabah 88400, Malaysia 3: Faculty of Engineering, Muroran Institute of Technology, Muroran, Hokkaido 050-8585, Japan

Publication date: November 1, 2017

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