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The Effect of Void in Thermal Layer on MOSFET’s Heat Dissipation

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Internal heat increase in silicon die may decrease the performance of the device to dissipate heat. In the worst case, it may cause thermal shock of the silicon and cause a catastrophic failure during operation. Internal heat increase is especially detrimental for devices that operate in temperature greater than ambient temperature. This paper presents the relationship of void in the thermal layer (solder) of a metal–oxide–semiconductor field-effect transistor’s (MOSFET) and it’s junction temperature in terms of the voltage at source–drain, V SD junction. The void inside the thermal layer is measured using ultrasound C-Mode Scanning Acoustic Microscopy (SAM) and the voltage source–drain of the MOSFET is similar to the diode forward voltage, V f. The result obtained from the study showed that as the void(s) size increase, the V SD will increase proportionally. This is an inter-correlation with an increase of temperature at MOSFET’s junction. The results indicate that SAM using ultrasound to measure void in thermal to indicate temperature increase inside a package (chip) is possible. The study also showed that the location of voids will affect poor heat dissipation rate. The experiment indicated that the volume or size of the void is not as important as its localization. A void underneath the source pad will cause poorer heat dissipation compared to a similar size void far from the source pad and nearer to the chip edge.
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Keywords: MOSFET; Scanning Acoustic Microscopy; Source–Drain Voltage; Thermal Layer; Ultrasound C-Mode; Void

Document Type: Research Article

Affiliations: 1: Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor D.E., Malaysia 2: Department of Electrical and Electronic Engineering, Segi University, 47810 Petaling Jaya, Selangor D.E., Malaysia

Publication date: November 1, 2017

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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