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Thermal Simulation of Light-Emitting Diode Panel with Heat Sink

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The aim of this study is to simulate and investigate the heat transfer phenomenon of light emitting diode packages. The performance of FR-4 and MCPCB dielectric materials with thermal conductivity of 0.3 W/mK and 201 W/mK respectively are numerically compared. MCPCB material is found to be an effective base that holds 34.8 °C for an input power of 0.5 W on a single 1 mm×1 mm GaN chip. For LED chip materials, the maximum temperature is 34.8 °C for GaN with thermal conductivity of 130 W/mK; 34.9 °C for GaP with 110 W/mK; and 34.5 °C for AlN with thermal conductivity of 285 W/mK. The simulation results show that the size of the base and the thickness of the heat sink fins are also important factors to be considered in the design.
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Keywords: Conductivity; Heat Dissipation; Light-Emitting Diode; Thermal Interface

Document Type: Research Article

Affiliations: Faculty of Engineering and Green Technology, Universiti Tunku Abdul Rahman, Kampar Campus, Malaysia

Publication date: November 1, 2017

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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