A Si-LDMOS Doherty Power Amplifier for 2.620–2.690 GHz Applications
In this paper, a Si-LDMOS Doherty power amplifier using 2.620 to 2.690 GHz band is presented. The fundamental objective of the proposed Doherty amplifier technique is to principally advance the efficiency of the transmitter while high linearity is maintained. This research focused on comparing performances between the double stage power amplifier and the conventional single stage class AB power amplifier. Consequently, individual simulation was conducted for both amplifiers. The results have shown that proposed double stage Doherty technique provides PAE of 52% and P out of 41.5 dBm as against 28% PAE of single stage class AB PA. However, the performance of the double stage Doherty has demonstrated an impressive improvement by 24% power added efficiency.
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Document Type: Research Article
Affiliations: 1: School of Engineering and Computer Science, University of Bradford, UK 2: Instituto de Telecomunicacoes, Aveiro, Portugal
Publication date: May 1, 2017
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