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Strong Narrow-Band Luminescence from Silicon-Vacancy Color Centers in Spatially Localized Sub-10 nm Nanodiamond

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Discrete nanodiamond particles of 500 nm and 6 nm average size were seeded onto silicon substrates and plasma treated using chemical vapor deposition to create silicon-vacancy color centers. The resulting narrowband room temperature photoluminescence is intense, and readily observed even for weakly agglomerated sub-10 nm size diamond. This is in contrast to the well-studied nitrogen-vacancy center in diamond which has luminescence properties that are strongly dependant on particle size, with low probability for incorporation of centers in sub-10 nm crystals. We suggest the silicon-vacancy center to be a viable alternative to nitrogenvacancy defects for use as a biomarker in the clinically-relevant sub-10 nm size regime, for which nitrogen defect-related luminescent activity and stability is reportedly poor.
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Document Type: Research Article

Publication date: February 1, 2011

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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