Manganese Distribution and Galvanomagnetic Properties of Delta-Doped GaAs Structures
We fabricated GaAs structures with single delta-doped layer by combined technique of MOCVD and pulsed laser deposition. The content of Mn in the delta-layers varied from 0.09 to 0.7 ML. Characterization of the structures was performed by SIMS profile analysis and Hall effect
measurements (10–300 K). Profile investigations revealed a segregation of Mn atoms to surface at the elevated contents of manganese. Galvanomagnetic measurements demonstrated correlation with features of Mn atom profile and presence of anomalous Hall effect at temperatures below 35 K.
Keywords: ANOMALOUS HALL EFFECT; DELTA DOPING; FERROMAGNETIC GAAS STRUCTURES; LASER DEPOSITION; SIMS PROFILING
Document Type: Research Article
Publication date: 01 April 2012
- Journal of Spintronics and Magnetic Nanomaterials is an international multidisciplinary peer-reviewed journal reporting new developments in the fields of magnetic and spintronics materials including their synthesis, characterization, properties, and applications in electronics, photonics, telecommunications, computer sciences, medicine, health science, etc. JSM is the first journal devoted to the exciting field of spintronics, which is playing a fundamental role in the novel technological developments based on the new spin torque transfer phenomena.
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