Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire
Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by
the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility
of creating the artificial SWCNT network, which can be applied to high-performance electronics.
Keywords: ALIGNED GROWTH; CARBON NANOTUBES; CVD; FIELD-EFFECT TRANSISTORS; SAPPHIRE
Document Type: Research Article
Publication date: 01 November 2008
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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