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40 articles with title/keywords/abstract containing plasma enhanced atomic layer deposition

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Preparation of CNT-Copper Matrix Composite Films

Authors: Menzel, S.B.; Thomas, J.; Weißker, U.; Schäffel, F.; Hoßbach, C.; Albert, M.; Hampel, S.; Gemming, T.

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 10, October 2009 , pp. 6096-6103(8)

Publisher: American Scientific Publishers

Titanium Dioxide Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition for OLED Passivation

Authors: Kim, Woong-Sun; Ko, Myoung-Gyun; Kim, Tae-Sub; Park, Sang-Kyun; Moon, Yeon-Keon; Lee, Su-Hwan; Park, Jae-Gun; Park, Jong-Wan

Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 9, September 2008 , pp. 4726-4729(4)

Publisher: American Scientific Publishers

Ruthenium Interlayer as Diffusion Barrier Under Carbon Overcoat in Magnetic Recording Media

Authors: Wang, Jianhui; Zhang, Sam; Wang, Huili; Xu, Ping; Iha, Dwight; Sawasaki, Steven

Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 5, May 2008 , pp. 2613-2617(5)

Publisher: American Scientific Publishers

GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Authors: Liu, G. X.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Kim, S. C.; Kim, H. S.; Cho, C. R.

Source: Integrated Ferroelectrics, Volume 94, Number 1, October 2007 , pp. 11-20(10)

Publisher: Taylor and Francis Ltd

Characteristics of Nanocomposite ZrO2/Al2O3 Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Authors: Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

Source: Journal of Nanoscience and Nanotechnology, Volume 7, Number 11, November 2007 , pp. 4180-4184(5)

Publisher: American Scientific Publishers

Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Authors: Liu, G.; Shan, F.; Park, J.; Lee, W.; Lee, G.; Kim, I.; Shin, B.; Yoon, S.

Source: Journal of Electroceramics, Volume 17, Numbers 2-4, December 2006 , pp. 145-149(5)

Publisher: Springer

Refractive index properties of SiN thin films and fabrication of SiN optical waveguide

Authors: Kim, D.; Yoon, S.; Jang, G.; Suh, S.; Kim, H.; Yoon, D.

Source: Journal of Electroceramics, Volume 17, Numbers 2-4, December 2006 , pp. 315-318(4)

Publisher: Springer

TRANSPARENT TITANIUM DIOXIDE THIN FILM DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

Authors: LIU, G.; SHAN, F.; LEE, W.; LEE, G.; KIM, I.; SHIN, B.; YOON, S.; CHO, C.

Source: Integrated Ferroelectrics, Volume 81, Number 1, Volume 81/2006 , pp. 239-248(10)

Publisher: Taylor and Francis Ltd

Ga 2 O 3 THIN FILM DEPOSITED BY ATOMIC LAYER DEPOSITION WITH HIGH PLASMA POWER

Authors: SHAN, F.; LIU, G.; LEE, W.; LEE, G.; KIM, I.; SHIN, B.

Source: Integrated Ferroelectrics, Volume 80, Number 1, Volume 80/2006 , pp. 197-206(10)

Publisher: Taylor and Francis Ltd

PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF ULTRATHIN Ga 2 O 3 -TiO 2 GATE DIELECTRICS ON Si (001) Substrates

Authors: SEONG, NAK-JIN; KIM, EUI-TAE; YOON, SOON-GIL

Source: Integrated Ferroelectrics, Volume 74, Number 1, Volume 74/2005 , pp. 181-187(7)

Publisher: Taylor and Francis Ltd

The determining factors for the growth mode of carbon nanotubes in the chemical vapour deposition process

Authors: In Kwang Song; Wan Jun Yu; You Suk Cho; Gyu Seok Choi; Dojin Kim

Source: Nanotechnology, Volume 15, Number 10, October 2004 , pp. S590-S595(1)

Publisher: Institute of Physics Publishing

Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

Authors: Lee Y.J.; Kang S.-W.

Source: Thin Solid Films, Volume 446, Number 2, 15 January 2004 , pp. 227-231(5)

Publisher: Elsevier

Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization

Authors: Kim D.-H.; Kim Y.J.; Park J.-H.; Kim J.H.

Source: Materials Science and Engineering: C, Volume 24, Number 1, 5 January 2004 , pp. 289-291(3)

Publisher: Elsevier

Wafer Bonding for III-V on Insulator Structures

Authors: Hayashi, S.; Bruno, D.; Sandhu, R.; Goorsky, M.S.

Source: Journal of Electronic Materials, Volume 32, Number 8, 1 August 2003 , pp. 877-881(5)

Publisher: Springer

Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties

Authors: Kim H.; Rossnagel S.M.

Source: Thin Solid Films, Volume 441, Number 1, 22 September 2003 , pp. 311-316(6)

Publisher: Elsevier

Effect of catalyst layer thickness and Ar dilution on the plasma deposition of multi-walled carbon nanotubes

Authors: Valentini L.; Armentano I.; Kenny J.M.; Lozzi L.; Santucci S.

Source: Diamond and Related Materials, Volume 12, Number 3, March 2003 , pp. 821-826(6)

Publisher: Elsevier

Chemical vapour deposition of coatings

Author: Choy K.L.

Source: Progress in Materials Science, Volume 48, Number 2, 2003 , pp. 57-170(114)

Publisher: Elsevier

Diamond-like carbon film overcoats for phase-change optical recording discs

Authors: Wang Y.C.; Shieh K.J.; Shyu M.S.; Shyu F.L.; Shyu J.S.; Hwang W.C.

Source: Surface and Coatings Technology, Volume 165, Number 2, 10 February 2003 , pp. 140-145(6)

Publisher: Elsevier

Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition

Authors: Lee W-J.; Shin W-C.; Chae B-G.; Ryu S-O.; You I-K.; Cho S.M.; Yu B-G.; Shin B-C.

Source: Integrated Ferroelectrics, Volume 46, Number 1, 1 January 2002 , pp. 275-284(10)

Publisher: Taylor and Francis Ltd

Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers

Authors: Butcher K.S.A.; Afifuddin; Chen P.P.-T.; Godlewski M.; Szczerbakow A.; Goldys E.M.; Tansley T.L.; Freitas J.A.

Source: Journal of Crystal Growth, Volume 246, Number 3, December 2002 , pp. 237-243(7)

Publisher: Elsevier

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