Search Results

Selective Forward Body Bias for High Speed and Low Power SRAMs

Authors: Bollapalli, Kalyana C.; Garg, Rajesh; Gulati, Kanupriya; Khatri, Sunil P.

Source: Journal of Low Power Electronics, Volume 5, Number 2, August 2009 , pp. 185-195(11)

Publisher: American Scientific Publishers

Novel Adaptive Body Biasing Techniques for Energy Efficient Subthreshold CMOS Circuits

Authors: Elgharbawy, Walid M.; Golconda, Pradeep; Moursy, Abdelhamid G.; Bayoumi, Magdy A.

Source: Journal of Low Power Electronics, Volume 3, Number 2, August 2007 , pp. 175-188(14)

Publisher: American Scientific Publishers

Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET

Authors: Goel, Kirti; Saxena, Manoj; Gupta, Mridula; Gupta, R.S.

Source: Semiconductor Science and Technology, Volume 22, Number 4, April 2007 , pp. 435-446(12)

Publisher: Institute of Physics Publishing

Subthreshold to Above Threshold Level Shifter Design

Authors: Chen, Tai-Hua; Chen, Jinhui; Clark, Lawrence T.

Source: Journal of Low Power Electronics, Volume 2, Number 2, August 2006 , pp. 251-258(8)

Publisher: American Scientific Publishers

On the Performance Analysis of a Class of Neuron Circuits

Authors: Gupta, Amit; Bhat, Navakanta

Source: Analog Integrated Circuits and Signal Processing, Volume 44, Number 3, September 2005 , pp. 293-302(10)

Publisher: Springer

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Authors: V. Gaspari; K. Fobelets; J.E. Velazquez-Perez; M.J. Prest; T.E. Whall

Source: Semiconductor Science and Technology, Volume 19, Number 9, September 2004 , pp. L95-L98(1)

Publisher: Institute of Physics Publishing

Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFET

Authors: Kaushik N.; Haldar S.; Gupta i.; Gupta R.S.

Source: Semiconductor Science and Technology, Volume 19, Number 3, March 2004 , pp. 373-379(7)

Publisher: Institute of Physics Publishing

Interneuron Diversity series: Fast in, fast out - temporal and spatial signal processing in hippocampal interneurons

Authors: Jonas P.; Bischofberger J.; Fricker D.; Miles R.

Source: Trends in Neurosciences, Volume 27, Number 1, January 2004 , pp. 30-40(11)

Publisher: Elsevier

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

Authors: Ortiz-Conde A.; Garcia Sanchez F.J.; Guzman M.

Source: Solid-State Electronics, Volume 47, Number 11, November 2003 , pp. 2067-2074(8)

Publisher: Elsevier

Tungsten erosion under simulation of iter divertor operation

Authors: Guseva M.I.; Gureev V.M.; Danelyan L.S.; Kolbasov B.N.; Korshunov S.N.; Martynenko Y.V.; Petrov V.B.; Stolyarova V.G.; Khripunov B.I.; Vasiliev V.I.; Strunnikov V.M.

Source: Plasma Devices and Operations, Volume 11, Number 3, September 2003 , pp. 141-153(13)

Publisher: Taylor and Francis Ltd

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

Authors: Munteanu D.; Autran J.-L.; Decarre E.; Dinescu R.

Source: Journal of Non-Crystalline Solids, Volume 322, Number 1, 15 July 2003 , pp. 206-212(7)

Publisher: Elsevier

Low-Power Log-Domain CMOS Filter Bank for 2-D Sound Source Localization

Authors: Grech I.; Micallef J.; Vladimirova T.

Source: Analog Integrated Circuits and Signal Processing, Volume 36, Numbers 1-2, July 2003 , pp. 99-117(19)

Publisher: Springer

Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Authors: Munteanu D.; Autran J.L.

Source: Solid-State Electronics, Volume 47, Number 7, July 2003 , pp. 1219-1225(7)

Publisher: Elsevier

1 V All-MOS A/D Converters in the Log-domain

Author: Serra-Graells F.

Source: Analog Integrated Circuits and Signal Processing, Volume 35, Number 1, April 2003 , pp. 47-57(11)

Publisher: Springer

Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Authors: Sheu C.-J.; Jang S.-L.

Source: Solid-State Electronics, Volume 47, Number 4, April 2003 , pp. 705-711(7)

Publisher: Elsevier

Analysis of the anomalous drain current characteristics of halo MOSFETs

Authors: Koo H.; Lee K.; Lee K.; Fjeldly T.A.; Shur M.S.

Source: Solid-State Electronics, Volume 47, Number 1, January 2003 , pp. 99-106(8)

Publisher: Elsevier

Evaluation of techniques for characterizing virgin and -irradiated power VDMOSFETs

Authors: Mileusnic S.; Zivanov M.; Habas P.

Source: Microelectronics Journal, Volume 33, Number 11, November 2002 , pp. 921-928(8)

Publisher: Elsevier

Abnormal conditioning effect of transcranial magnetic stimulation on soleus H-reflex during voluntary movement in Parkinson's disease

Authors: Morita H.; Shindo M.; Morita S.; Hashimoto T.; Tada T.; Ikeda S.

Source: Clinical Neurophysiology, Volume 113, Number 8, August 2002 , pp. 1316-1324(9)

Publisher: Elsevier

Identification of K⁺-mesons from subthreshold pA collisions with ANKE at COSY-Julich

Authors: Buscher M.; Junghans H.; Koptev V.; Nekipelov M.; Sistemich K.; Stroher H.; Barsov S.; Borchert G.; Borgs W.; Debowski M.; Erven W.; Esser R.; Fedorets P.; Gotta D.; Hartmann M.; Hejny V.; Kacharava A.; Koch H.R.; Komarov V.; Kulessa P.; Kulikov A.; Macharashvili G.; Merzliakov S.; Mikirtychiants S.; Muller H.; Mussgiller A.; Nellen R.; Nioradze M.; Ohm H.; Petrus A.; Rathmann F.; Rudy Z.; Schleichert R.; Schneider C.; Schult O.W.B.; Stein H.J.; Zychor I.

Source: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 481, Number 1, 1 April 2002 , pp. 378-396(19)

Publisher: Elsevier

AII (Rod) Amacrine Cells Form a Network of Electrically Coupled Interneurons in the Mammalian Retina

Authors: Veruki M.L.; Hartveit E.

Source: Neuron, Volume 33, Number 6, 14 March 2002 , pp. 935-946(12)

Publisher: Elsevier