Search Results

Long-wavelength nonpolar phonons in semiconductor heterostructures

Authors: León-Pérez, F.; Pérez-Alvarez, R.

Source: The European Physical Journal B - Condensed Matter, Volume 41, Number 4, October 2004 , pp. 451-456(6)

Publisher: Springer

Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices

Authors: Qin L.; Shen Z.X.; Teo K.L.; Peng C.S.; Zhou J.M.; Tung C.H.; Tang S.H.

Source: Thin Solid Films, Volume 424, Number 1, 22 January 2003 , pp. 23-27(5)

Publisher: Elsevier

Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrically Strained Si/Ge Superlattices

Authors: W.L. Liu; T. Borca-Tasciuc; G. Chen; J.L. Liu; K.L. Wang

Source: Journal of Nanoscience and Nanotechnology, Volume 1, Number 1, March 2001 , pp. 39-42(4)

Publisher: American Scientific Publishers

First-principles study of Raman intensities in semiconductor systems

Authors: Pavone P.; Steininger B.; Strauch D.

Source: Computational Materials Science, Volume 20, Number 3, March 2001 , pp. 363-370(8)

Publisher: Elsevier

Thermal conductivity of symmetrically strained Si/Ge superlattices

Authors: Borca-Tasciuc T.; Liu W.; Liu J.; Zeng T.; Song D.W.; Moore C.D.; Chen G.; Wang K.L.; Goorsky M.S.; Radetic T.; Gronsky R.; Koga T.; Dresselhaus M.S.

Source: Superlattices and Microstructures, Volume 28, Number 3, September 2000 , pp. 199-206(8)

Publisher: Elsevier

Influence of the short-range structural properties on the elastic constants of Si/Ge superlattices

Authors: Prieto C.; Bernabé A.d.; Castañer R.; Muñoz-Martín A.; Jiménez-Rioboó R.J.; García-Hernández M.; Andrés A.d.

Source: Journal of Physics: Condensed Matter, Volume 12, Number 13, 2000 , pp. 2931-2943(13)

Publisher: Institute of Physics Publishing

Computation of thermal conductivity of Si/Ge superlattices by molecular dynamics techniques

Authors: Volz S.; Saulnier J.B.; Chen G.; Beauchamp P.

Source: Microelectronics Journal, Volume 31, Number 9, October 2000 , pp. 815-819(5)

Publisher: Elsevier

Thermal conductivity of symmetrically strained Si/Ge superlattices

Authors: Borca-Tasciuc T.; Liu W.; Liu J.; Zeng T.; Song D.W.; Moore C.D.; Chen G.; Wang K.L.; Goorsky M.S.; Radetic T.; Gronsky R.; Koga T.; Dresselhaus M.S.

Source: Superlattices and Microstructures, Volume 28, Number 3, September 2000 , pp. 199-206(8)

Publisher: Academic Press

Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (Si_nGe_m)₁₆ superlattices

Authors: Mironov O.A.; Fulgoni D.J.F.; Parry C.P.; Cooke G.A.; Dowsett M.G.; Parker E.H.C.; Chtcherbatchev K.D.; Bassas J.M.; Romano-Rodriguez A.; Perez-Rodriguez A.; Morante J.R.

Source: Thin Solid Films, Volume 367, Number 1, 15 May 2000 , pp. 176-179(4)

Publisher: Elsevier

Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells

Authors: Menzel D.; Koschinski W.; Dettmer K.; Schoenes J.

Source: Thin Solid Films, Volume 342, Number 1, 26 March 1999 , pp. 312-316(5)

Publisher: Elsevier

Elastic behaviour of Si/Ge superlattices determined by Brillouin light scattering

Authors: de Bernabe A.; Jimenez R.; Garca-Hernandez M.; Prieto C.

Source: Thin Solid Films, Volume 317, Number 1, 1 April 1998 , pp. 255-258(4)

Publisher: Elsevier

Spontaneous oscillator strength modulation in MBE-grown Si/Ge superlattices

Authors: Miyake Y.; Shiraki Y.; Fukatsu S.

Source: Thin Solid Films, Volume 321, Number 1, 26 May 1998 , pp. 153-157(5)

Publisher: Elsevier

Near and mid infrared silicon/germanium based photodetection

Author: Presting H.

Source: Thin Solid Films, Volume 321, Number 1, 26 May 1998 , pp. 186-195(10)

Publisher: Elsevier

Titanium metallization of Si/Ge alloys and superlattices

Authors: Freiman W.; Beserman R.; Dettmer K.

Source: Thin Solid Films, Volume 294, Number 1, 15 February 1997 , pp. 217-219(3)

Publisher: Elsevier

Optical transitions in Si/Ge superlattices

Authors: Erkoc; Katircioglu

Source: Thin Solid Films, Volume 295, Number 1, 28 February 1997 , pp. 206-209(4)

Publisher: Elsevier

Vibrational properties of Si/Ge superlattices

Authors: Choi S.-K.; Lee J.-H.; Kang S.-J.; Jin S.-H.; Jian Z.; Kaiming Z.; Xide X.

Source: Progress in Surface Science, Volume 54, Number 1, January 1997 , pp. 69-113(45)

Publisher: Elsevier

Growth and properties of nonperiodic multiple thin films

Author: Sasaki A.

Source: Thin Solid Films, Volume 306, Number 2, 11 September 1997 , pp. 346-351(6)

Publisher: Elsevier

Investigation of inversion-asymmetry effects on the band structure of Sn₁Ge_n superlattices

Authors: Voon L.C.L.Y.; Willatzen M.; Santos P.V.; Cardona M.; Munzar D.; Christensen N.E.

Source: Solid-State Electronics, Volume 40, Number 1, 1996 , pp. 191-195(5)

Publisher: Elsevier

Influence of electron irradiation and annealing on the photoluminescence of Si/Ge superlattices and Si/Ge quantum wells

Authors: Sobelev N.A.; Korshunov F.P.; Sauer R.; Thonke K.; Konig U.; Presting H.

Source: Journal of Crystal Growth, Volume 167, Number 3, October 1996 , pp. 502-507(6)

Publisher: Elsevier

Band-gap luminescence in strain-symmetrized Si_m/Ge_n superlattices grown by molecular beam epitaxy using gaseous Si₂H₆ and solid Ge

Authors: Zhu X.; Xiang Q.; Chu M.; Wang K.L.

Source: Journal of Crystal Growth, Volume 150, Number unknown, 1 May 1995 , pp. 1045-1049(5)

Publisher: Elsevier