Search Results

Characteristics of ZnO Nanowall Structures Grown on GaN Template Using Organometallic Chemical Vapor Deposition

Authors: Wu, C.C.; Wuu, D.S.; Chen, T.N.; Yu, T.E.; Lin, P.R.; Horng, R.H.; Sun, S.

Source: Journal of Nanoscience and Nanotechnology, Volume 8, Number 8, August 2008 , pp. 3851-3856(6)

Publisher: American Scientific Publishers

Interaction of copper organometallic precursors with barrier layers of Ti, Ta and W and their nitrides: a first-principles molecular dynamics study

Authors: Machado, Eduardo; Kaczmarski, Marcin; Braida, Benoît; Ordejón, Pablo; Garg, Diwakar; Norman, John; Cheng, Hansong

Source: Journal of Molecular Modeling, Volume 13, Numbers 6-7, July 2007 , pp. 861-864(4)

Publisher: Springer

Editorial [Hot Topic: Organometallic Chemistry, Coordination Chemistry and Catalysis (Guest Editor: Julio Perez)]

Author: Perez, Julio

Source: Current Organic Chemistry, Volume 10, Number 9, June 2006 , pp. 921-921(1)

Publisher: Bentham Science Publishers

Carbon supported platinum catalysts for catalytic wet air oxidation of refractory carboxylic acids

Authors: Gomes, H.; Serp, Ph.; Kalck, Ph.; Figueiredo, J.; Faria, J.

Source: Topics in Catalysis, Volume 33, Numbers 1-4, April 2005 , pp. 59-68(10)

Publisher: Springer

Growth and characterization of In_xGa_1-xN MQW using a novel method of temperature gradient OMVPE

Authors: Johnson M.C.; Jorgenson R.J.; Wu J.; Shan W.; Bourret-Courchesne E.

Source: Journal of Crystal Growth, Volume 261, Number 1, 15 January 2004 , pp. 44-49(6)

Publisher: Elsevier

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Authors: Smith T.P.; Mecouch W.J.; Miraglia P.Q.; Roskowski A.M.; Hartlieb P.J.; Davis R.F.

Source: Journal of Crystal Growth, Volume 257, Number 3, October 2003 , pp. 255-262(8)

Publisher: Elsevier

Electrophysical properties of thin germanium/carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition process

Authors: Szmidt J.; Gazicki-Lipman M.; Szymanowski H.; Mazurczyk R.; Werbowy A.; Kudla A.

Source: Thin Solid Films, Volume 441, Number 1, 22 September 2003 , pp. 192-199(8)

Publisher: Elsevier

Highly dispersed activated carbon supported platinum catalysts prepared by OMCVD: a comparison with wet impregnated catalysts

Authors: Aksoylu A.E.; Faria J.L.; Pereira M.F.R.; Figueiredo J.L.; Serp P.; Hierso J.-C.; Feurer R.; Kihn Y.; Kalck P.

Source: Applied Catalysis A: General, Volume 243, Number 2, 10 April 2003 , pp. 357-365(9)

Publisher: Elsevier

Chemical vapor deposited RuO_x films: annealing effects

Authors: Gopal Ganesan P.; Shpilman Z.; Eizenberg M.

Source: Thin Solid Films, Volume 425, Number 1, 3 February 2003 , pp. 163-170(8)

Publisher: Elsevier

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

Authors: Reiher A.; Blasing J.; Dadgar A.; Diez A.; Krost A.

Source: Journal of Crystal Growth, Volume 248, Number unknown, February 2003 , pp. 563-567(5)

Publisher: Elsevier

A multiscale study of the selective MOVPE of Al_xGa_1-xAs in the presence of HCl

Authors: Cavallotti C.; Nemirovskaya M.; Jensen K.F.

Source: Journal of Crystal Growth, Volume 248, Number unknown, February 2003 , pp. 411-416(6)

Publisher: Elsevier

STM observations of organometallic complexes on the TiO₂(110) and Si(111) surfaces

Authors: Maeda Y.; Okumura M.; Date M.; Tsubota S.; Haruta M.

Source: Surface Science, Volume 514, Number 1, 10 August 2002 , pp. 267-272(6)

Publisher: Elsevier

Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

Authors: Tena-Zaera R.; Mora-Sero I.; Martnez-Tomas C.; Munoz-Sanjose V.

Source: Journal of Crystal Growth, Volume 240, Number 1, April 2002 , pp. 124-134(11)

Publisher: Elsevier

Using tetrakis-diethylamido-hafnium for HfO₂ thin-film growth in low-pressure chemical vapor deposition

Authors: Ohshita Y.; Ogura A.; Hoshino A.; Hiiro S.; Suzuki T.; Machida H.

Source: Thin Solid Films, Volume 406, Number 1, 1 March 2002 , pp. 215-218(4)

Publisher: Elsevier

The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials

Author: Biefeld R.M.

Source: Materials Science and Engineering: R: Reports, Volume 36, Number 4, 15 March 2002 , pp. 105-142(38)

Publisher: Elsevier

Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

Authors: Kurtz S.; Reedy R.; Barber G.D.; Geisz J.F.; Friedman D.J.; McMahon W.E.; Olson J.M.

Source: Journal of Crystal Growth, Volume 234, Number 2, January 2002 , pp. 318-322(5)

Publisher: Elsevier

Evaluation of NF₃ versus dimethylhydrazine as N sources for GaAsN

Authors: Kurtz S.; Reedy R.; Keyes B.; Barber G.D.; Geisz J.F.; Friedman D.J.; McMahon W.E.; Olson J.M.

Source: Journal of Crystal Growth, Volume 234, Number 2, January 2002 , pp. 323-326(4)

Publisher: Elsevier

Investigation of electrochromic properties of nanocrystalline tungsten oxide thin film

Authors: Meda L.; Breitkopf R.C.; Haas T.E.; Kirss R.U.

Source: Thin Solid Films, Volume 402, Number 1, 1 January 2002 , pp. 126-130(5)

Publisher: Elsevier

Spontaneous and stimulated emission in ZnCdTe-ZnTe quantum wells grown by LP-MOCVD

Authors: Shan C.X.; Fan X.W.; Zhang J.Y.; Zhang Z.Z.; Lu Y.M.; Liu Y.C.; Shen D.Z.

Source: Thin Solid Films, Volume 401, Number 1, 17 December 2001 , pp. 225-228(4)

Publisher: Elsevier

Chemical vapor deposition of copper film from hexafluoroacetyl-acetonateCu^(I)vinylcyclohexane

Authors: Choi K.-K.; Rhee S.-W.

Source: Thin Solid Films, Volume 397, Number 1, 1 October 2001 , pp. 70-77(8)

Publisher: Elsevier