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The genesis and importance of oxide-metal interface controlled heterogeneous catalysis; the catalytic nanodiode

Authors: Park, Jeong; Renzas, J.; Contreras, A.; Somorjai, Gabor

Source: Topics in Catalysis, Volume 46, Numbers 1-2, September 2007 , pp. 217-222(6)

Publisher: Springer

Hydrogen sensing characteristics of Pd- and Pt-Al_0.3Ga_0.7As metal–semiconductor (MS) Schottky diodes

Authors: Cheng C-C.; Tsai Y-Y.; Lin K-W.; Chen H-I.; Hsu W-H.; Chuang H-M.; Chen C-Y.; Liu W-C.

Source: Semiconductor Science and Technology, Volume 19, Number 6, June 2004 , pp. 778-782(5)

Publisher: Institute of Physics Publishing

Sputter-induced defects in Zn-doped GaAs Schottky diodes

Authors: Arakaki H.; Ohashi K.; Sudou T.

Source: Semiconductor Science and Technology, Volume 19, Number 1, January 2004 , pp. 127-132(6)

Publisher: Institute of Physics Publishing

Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H-SiC

Authors: van Wyk E.; Leitch A.W.R.

Source: Applied Surface Science, Volume 221, Number 1, 15 January 2004 , pp. 415-420(6)

Publisher: Elsevier

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C-SiC substrates

Authors: An Z.; Hirai M.; Kusaka M.; Iwami M.

Source: Surface Science, Volume 547, Number 1, 10 December 2003 , pp. 193-200(8)

Publisher: Elsevier

Magnetic properties influenced by interfaces in ultrathin Co/Ge(1 0 0) and Co/Ge(1 1 1) films

Authors: Tsay J.S.; Yao Y.D.; Cheng W.C.; Tseng T.K.; Wang K.C.; Yang C.S.

Source: Applied Surface Science, Volume 219, Number 1, 15 October 2003 , pp. 88-92(5)

Publisher: Elsevier

Structure change of ultra-thin Ni-deposited 6H-SiC(0001)-3x3 surface by post-annealing

Authors: Hoshino Y.; Kitamura O.; Nakada T.; Kido Y.

Source: Surface Science, Volume 539, Number 1, 1 August 2003 , pp. 14-20(7)

Publisher: Elsevier

Evolution of step and terrace structure on [112]- and [112]-miscut Si(111) surfaces upon formation of triple- and single-domain Yb-induced 3x2 reconstruction

Authors: Vaara R.-L.; Kuzmin M.; Perala R.E.; Laukkanen P.; Vayrynen I.J.

Source: Surface Science, Volume 539, Number 1, 1 August 2003 , pp. 72-80(9)

Publisher: Elsevier

The adsorption and dissociation of O₂ molecular precursors on Cu: the effect of steps

Authors: Xu Y.; Mavrikakis M.

Source: Surface Science, Volume 538, Number 3, 20 July 2003 , pp. 219-232(14)

Publisher: Elsevier

Current/voltage characteristics of a semiconductor metal oxide gas sensor

Authors: Pitcher S.; Thiele J.A.; Ren H.; Vetelino J.F.

Source: Sensors and Actuators B: Chemical, Volume 93, Number 1, 1 August 2003 , pp. 454-462(9)

Publisher: Elsevier

Sb induced (7x7) to (1x1) surface phase transformation of the Si(111) surface

Authors: Paliwal V.K.; Vedeshwar A.G.; Shivaprasad S.M.

Source: Solid State Communications, Volume 127, Number 1, June 2003 , pp. 7-11(5)

Publisher: Elsevier

Yb, Eu, and (Yb+Eu)-stabilized 3x1 and 3x2 reconstructions on Si(111)

Authors: Kuzmin M.; Vaara R.-L.; Laukkanen P.; Perala R.E.; Vayrynen I.J.

Source: Surface Science, Volume 538, Number 1, 10 July 2003 , pp. 124-136(13)

Publisher: Elsevier

Effect of Ni-Cu substrates on phase selection of hexagonal and cubic boron nitride thin films

Authors: Kotake S.; Hasegawa T.; Kamiya K.; Suzuki Y.; Masui T.; Kangawa Y.; Nakamura K.; Ito T.

Source: Applied Surface Science, Volume 216, Number 1, 30 June 2003 , pp. 72-77(6)

Publisher: Elsevier

Theoretical investigation of the Au/Si(111)-(5x2) surface structure

Authors: Kang M.-H.; Lee J.Y.

Source: Surface Science, Volume 531, Number 1, 10 May 2003 , pp. 1-7(7)

Publisher: Elsevier

Admittance spectroscopy of metal-semiconductor interfaces prepared by ionized cluster beam technique

Authors: Korosak D.; Cvikl B.

Source: Vacuum, Volume 71, Number 1, 9 May 2003 , pp. 123-128(6)

Publisher: Elsevier

The Co/Si(111) interface formation: a temperature dependent reaction

Authors: Luches P.; Rota A.; Valeri S.; Pronin I.I.; Valdaitsev D.A.; Faradzhev N.S.; Gomoyunova M.V.

Source: Surface Science, Volume 511, Number 1, June 2002 , pp. 303-311(9)

Publisher: Elsevier

Structural studies of two- and three-dimensional dysprosium silicides using medium-energy ion scattering

Authors: Spence D.J.; Noakes T.C.Q.; Bailey P.; Tear S.P.

Source: Surface Science, Volume 512, Number 1, 20 June 2002 , pp. 61-66(6)

Publisher: Elsevier

nm-sized metal particles on a semiconductor surface, Schottky model, etc.

Author: Zhdanov V.P.

Source: Surface Science, Volume 512, Number 1, 20 June 2002 , pp. 331-334(4)

Publisher: Elsevier

Substitution of In for Si adatoms and In-induced charge redistribution of the Si(111)-(7x7) surface

Authors: Yoon M.; Willis R.F.

Source: Surface Science, Volume 512, Number 3, 1 July 2002 , pp. 255-261(7)

Publisher: Elsevier

Surface electronic states of Yb silicide ultrathin films studied with He metastable deexcitation spectroscopy

Authors: D'Addato S.; Pasquali L.; Nannarone S.

Source: Journal of Electron Spectroscopy and Related Phenomena, Volume 127, Number 1, November 2002 , pp. 109-115(7)

Publisher: Elsevier