Search Results

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

Authors: Wang, Lu; Li, Meicheng; Xiong, Min; Zhao, Liancheng

Source: Nanoscale Research Letters, Volume 4, Number 7, July 2009 , pp. 689-693(5)

Publisher: Springer

Fiber-coupled near-infrared single-photon spectrum analyzer based on a InGaAs/InP avalanche photodiode single-photon detector

Authors: Wu, Guang; Xu, Lilin; Chen, Jie; Li, Yao; Gu, Xiaorong; Wu, E.; Zeng, Heping

Source: Journal of Modern Optics, Volume 56, Numbers 2-3, January 2009 , pp. 296-298(3)

Publisher: Taylor and Francis Ltd

Single-photon avalanche diodes for the near-infrared range: detector and circuit issues

Authors: Tosi, Alberto; Mora, Alberto Dalla; Zappa, Franco; Cova, Sergio

Source: Journal of Modern Optics, Volume 56, Numbers 2-3, January 2009 , pp. 299-308(10)

Publisher: Taylor and Francis Ltd

Improved implementation and modeling of deadtime reduction in an actively multiplexed detection system

Authors: Brida, G.; Degiovanni, I. P.; Schettini, V.; Polyakov, S. V.; Migdall, A.

Source: Journal of Modern Optics, Volume 56, Numbers 2-3, January 2009 , pp. 405-412(8)

Publisher: Taylor and Francis Ltd

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

Authors: Wu, B.P.; Wu, D.H.; Xiong, Y.H.; Huang, S.S.; Ni, H.Q.; Xu, Y.Q.; Niu, Z.C.

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 2, February 2009 , pp. 1333-1336(4)

Publisher: American Scientific Publishers

Computational Study on the In-Plane Symmetry of Electron Wavefunctions in Self-Assembled InAs/GaAs Quantum Dots

Authors: Mukai, Kohki; Watanabe, Keita; Nakashima, Kenta

Source: Journal of Nanoscience and Nanotechnology, Volume 9, Number 1, January 2009 , pp. 108-114(7)

Publisher: American Scientific Publishers

Mid/far-infrared photodetectors based on quantum coherence in coupled quantum wells

Authors: K. Wojcik, Aleksander; Xie, Feng; Chaganti, V. R.; Belyanin, Alexey; Kono, Junichiro

Source: Journal of Modern Optics, Volume 55, Numbers 19-20, November 2008 , pp. 3305-3317(13)

Publisher: Taylor and Francis Ltd

InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Authors: Ulm, Thorsten; Harth, Florian; Fuchs, Harry; L'huillier, Johannes; Wallenstein, Richard

Source: Applied Physics B, Volume 92, Number 4, September 2008 , pp. 481-485(5)

Publisher: Springer

On-Line Near-Infrared Spectrometer to Monitor Urea Removal in Real Time During Hemodialysis

Authors: Cho, David S.; Olesberg, Jonathon T.; Flanigan, Michael J.; Arnold, Mark A.

Source: Applied Spectroscopy, Volume 62, Issue 8, Pages 184A-204A and 833-935 (August 2008) , pp. 866-872(7)

Publisher: Society for Applied Spectroscopy

High-peak-power passively Q-switched Nd:YAG laser at 946 nm

Authors: Huang, Y.P.; Su, K.W.; Li, A.; Chen, Y.F.; Huang, K.F.

Source: Applied Physics B, Volume 91, Numbers 3-4, June 2008 , pp. 429-432(4)

Publisher: Springer

Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors

Authors: Zhi-Cheng, Wang; Bo, Xu; Yong-Hai, Chen; Li-Wei, Shi; Zhi-Mei, Liang; Zhan-Guo, Wang

Source: Chinese Physics Letters, Volume 25, Number 7, July 2008 , pp. 2645-2648(4)

Publisher: Institute of Physics Publishing

High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage

Authors: Zhi, Jin; Yong-Bo, Su; Wei, Cheng; Xin-Yu, Liu; An-Huai, Xu; Ming, Qi

Source: Chinese Physics Letters, Volume 25, Number 7, July 2008 , pp. 2683-2685(3)

Publisher: Institute of Physics Publishing

High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with f_t = 170 GHz and f_max = 253 GHz

Authors: Zhi, Jin; Yong-Bo, Su; Wei, Cheng; Xin-Yu, Liu; An-Hai, Xu; Ming, Qi

Source: Chinese Physics Letters, Volume 25, Number 7, July 2008 , pp. 2686-2689(4)

Publisher: Institute of Physics Publishing

Ballistic nanodevices for high frequency applications

Authors: Gardes, C.; Roelens, Y.; Bollaert, S.; Galloo, J-S.; Wallart, X.; Curutchet, A.; Gaquiere, C.; Mateos, J.; Gonzalez, T.; Vasallo, B.G.; Bednarz, L.; Huynen, I.

Source: International Journal of Nanotechnology, Volume 5, Numbers 6-8, 14 June 2008 , pp. 796-808(13)

Publisher: Inderscience Publishers

Design, Fabrication and Testing of GaAs/AlAs/InGaAs Resonant Tunneling Vector Hydrophones

Authors: Liu, Wenyi; Tong, Zhaomin; Xue, Chenyang; Zhang, Binzhen; Li, Mengwei; Zhang, Wendong

Source: Sensor Letters, Volume 6, Number 2, April 2008 , pp. 272-279(8)

Publisher: American Scientific Publishers

High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structure

Authors: Chang, Hsiang-Szu; Hsu, Chieh-Ming; Chen, Wen-Yen; Hsieh, Tung-Po; Chyi, Jen-Inn; Tzu Min Hsu,

Source: Nanotechnology, Volume 19, Number 4, 30 January 2008 , pp. 45714-45717(4)

Publisher: Institute of Physics Publishing

Many-body theory of quantum coherence in semiconductor quantum dots

Authors: Chow, W. W.; Michael, S.; Schneider, H. C.

Source: Journal of Modern Optics, Volume 54, Numbers 16-17, November 2007 , pp. 2413-2424(12)

Publisher: Taylor and Francis Ltd

Carrier dynamics in p-type InGaAs/GaAs quantum dots

Authors: Wen, X.; Dao, L.; Davis, J.; Hannaford, P.; Mokkapati, S.; Tan, H.; Jagadish, C.

Source: Journal of Materials Science: Materials in Electronics, Volume 18, Supplement 1, October 2007 , pp. 363-365(3)

Publisher: Springer

Correlation between E ₁ transition broadening and carrier mobility in the channel layer of pseudomorphic high electron mobility transistor epistructures

Authors: Thamban, P.; Pinsukanjana, P.; Glosser, R.

Source: Journal of Materials Science: Materials in Electronics, Volume 18, Supplement 1, October 2007 , pp. 439-442(4)

Publisher: Springer

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

Authors: Rainò, Gabriele; Visimberga, Giuseppe; Salhi, Abdelmajid; Todaro, Maria; Vittorio, Massimo; Passaseo, Adriana; Cingolani, Roberto; Giorgi, Milena

Source: Nanoscale Research Letters, Volume 2, Number 10, October 2007 , pp. 509-511(3)

Publisher: Springer