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Minimization of the performance degradation of laser parameters with operating time of quantum dot laser using indium nitride

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We have analyzed theoretically the effect of laser operating time on feedback characteristics of quantum dot laser using GaN, AlN, and InN as the active layer material. Our investigation includes features like carrier density, feedback strength, and Fermi wave function of quantum dot laser. The laser operating time of quantum dot laser affects the carrier concentration, fermi wave function, and feedback strength. As carrier concentration has been improved by using InN as the active material, the other parameters related to it have also been improved. The other parameter improvements have been achieved in terms of improved feedback strength higher Fermi wave function.

Keywords: Carrier Density; Feedback Strength; Fermi Wave Function; InN; Operating Time; Quantum Dot

Document Type: Research Article

Publication date: 19 March 2015

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  • Physics Essays has been established as an international journal dedicated to theoretical and experimental aspects of fundamental problems in Physics and, generally, to the advancement of basic knowledge of Physics. The Journal's mandate is to publish rigorous and methodological examinations of past, current, and advanced concepts, methods and results in physics research. Physics Essays dedicates itself to the publication of stimulating exploratory, and original papers in a variety of physics disciplines, such as spectroscopy, quantum mechanics, particle physics, electromagnetic theory, astrophysics, space physics, mathematical methods in physics, plasma physics, philosophical aspects of physics, chemical physics, and relativity.
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