Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes
We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility
of 33 cm2/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.
Keywords: Graphene; field effect transistor; flexible electronics; inkjet printing
Document Type: Research Article
Publication date: 01 October 2013
- Current Nanoscience publishes authoritative reviews and original research reports, written by experts in the field on all the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano- structures, synthesis, properties, assembly and devices. Applications of nanoscience in biotechnology, medicine, pharmaceuticals, physics, material science and electronics are also covered. The journal is essential to all involved in nanoscience and its applied areas.
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