Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters
MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying pulses to the gate electrode. The γ-irradiation with doses in the
range 0–100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ∼2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field. In order to increase the dosimeter sensitive volume and to improve the
insulating properties of the gate dielectric a new fabrication method based on two-step annealing process has been proposed.
Keywords: FLOATING GATE; GAMMA-RADIATION; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; MOS DOSIMETER; NANOCLUSTERS; NANOCRYSTALS
Document Type: Research Article
Publication date: 01 March 2012
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