On the Diffusivity Mobility Ratio in III–V, Ternary and Quaternary Materials in the Presence of Intense Electric Field

An attempt is made in this paper to study the diffusivity mobility ratio (DMR) in III–V, ternary and quaternary materials in the presence of an intense electric field on the basis of a newly formulated electron dispersion relation. The unperturbed isotropic electron energy spectrum gets modified under intense electric field and changes into an anisotropic energy wave vector relation with energy dependent mass anisotropy. It has been found taking, n–InSb, Hg_1–x Cd _x Te and In_1–x Ga _x As _y P_1–y lattice matched to InP as examples of Kane-type semiconductors for numerical computation that the DMR increases with increasing electron concentration and decreasing alloy composition for all the materials. The DMR becomes more or less constant with increasing the electric fields up to a certain values of the external electric field (depending on the constants of the energy band structure of a particular material) and then decreases smoothly with increasing electric field. In the absence of electric field all the results get transformed into the well-known expression of DMR and thus confirming the compatibility test. We have suggested an experimental method of determining the DMR for materials having arbitrary dispersion laws and the content of this paper finds four applications in the fields of quantum science and technology.