Structural, Optical, and Electrical Properties of p-Type SnO Thin Films Deposited by Reactive RF Magnetron Sputtering
p-type SnO thin films were deposited by reactive radio frequency magnetron sputtering and post-annealing treatments. The tin oxide thin films deposited at room temperature at different oxygen partial pressures (O2/(Ar + O2), Opp) were amorphous
except the thin film deposited at an Opp of 1%. The thin film deposited in Opp = 3% followed by annealing in air at 300 C exhibited a single polycrystalline α-SnO phase. The SnO phase was also examined by X-ray photoelectron spectroscopy. After annealing
at 300 C, the n-type electronic properties of the as-deposited thin films changed to p-type characteristics. With increasing annealing temperature, the opaque color of the thin films deposited in Opp = 3% at room temperature became transparent in the visible light
region. The optical bandgap (E
g) of the p-type SnO thin film was approximately 2.8∼2.9 eV.
Keywords: OXIDE SEMICONDUCTORS; P-TYPE; SNO; SNO2; TIN OXIDE
Document Type: Research Article
Publication date: 01 October 2012
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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