Negative Differential Resistance Device from Organic/Inorganic Hybrid Nanostructures

Negative differential resistance device (NDR) fabricated by spin coating of organic/inorganic hybrid nanostructures at room temperature, is reported in the present paper. The coated organic layer is MEH-PPV (poly-[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylenevinylene] and inorganic layer is ZnO nanoparticles. The device shows negative differential resistance at low voltage and I–V characteristics of the device show multiple peaks at low voltage values. A value of 13 and 4 for the peak- to-valley ratio of current are reported in bi-layer and single layer structures respectively. Depending on the observed NDR signature, operating mechanisms are explored based on carrier (resonant) tunneling process and donor like trap mechanisms. This results show that the MEH-PPV/ZnO thin films gives good performance and is relevant for applications in optoelectronic devices such as a negative differential resistance.