Low Temperature SiC Film Deposition Using Trichlorosilane Gas and Monomethylsilane Gas
In order to produce silicon carbide thin film through the process entirely at low temperatures, silicon carbide chemical vapor deposition on a silicon wafer surface was performed using trichlorosilane gas and monomethylsilane gas. First, the silicon thin film was formed using trichlorosilane
gas at 800 °C and was cooled to room temperature in ambient hydrogen, in order to produce hydrogen-terminated silicon surface. Next, monomethylsilane gas was introduced at room temperature to produce silicon carbide thin film. The mirror-like appearance of the film obtained by this process
was maintained after the exposure to hydrogen chloride gas at 800 °C. Furthermore, very thin Si–C layer was detected at the surface by means of the time-of-flight secondary ion mass spectrometry. Thus, the silicon carbide thin film was concluded to be formed through the process at
temperatures below 800 °C.
Keywords: CHEMICAL VAPOR DEPOSITION; MONOMETHYLSILANE; ROOM TEMPERATURE; SILICON CARBIDE; TRICHLOROSILANE
Document Type: Research Article
Publication date: 01 September 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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