Improved Optical and Electrical Characteristics of Free-Standing GaN Substrates by Chemical Polishing Utilizing Photo-Electrochemical Method
The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current–voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.
Keywords: GAN; PHOTO-ELECTROCHEMICAL METHOD; PHOTOLUMINESCENCE; POLISHING; SCHOTTKY BARRIER
Document Type: Research Article
Publication date: 01 April 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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