Growth of Zn1−x Mg x O and Zn1−x Cd x O Nanowires and the Application in Light Emitting Devices
Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy
and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn1−x
Mg
x
O nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement
yields a strong emission peak at 553 nm from the Zn1−x
Mg
x
O nanowire.
Keywords: DOPING; LIGHT EMITTING DIODE; ZNO
Document Type: Research Article
Publication date: 01 August 2010
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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