Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots
After rapid thermal annealing (RTA), deep levels were found to be generated in Au/GaAs Schottky diodes embedded with InAs quantum dots grown by migration enhanced molecular beam epitaxy (MEMBE). From the corner frequency of the 1/f 2 part of the low-frequency noise specrtral density, the locations of the deep levels were estimated to be 0.58, 0.61, and 0.66 eV below the conduction band edge for the samples without quantum dot layer, with quantum dot layer and capping layer thickness of 0.8 μm, and with quantum dot layer and the capping layer thickness of 0.4 μm, respectively. RTA also lowered the Schottky barrier height.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 01 October 2008
More about this publication?
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites