Silicon Nanocluster Prepared Using Ion Beam Mixing Technique

In this work, we present the results of modification of absorption band gap of Silicon nanoclusters (Si-nc) prepared by ion beam mixing on pre-irradiated fused silica. 30keV Ar⁺ ions at fluences of 5 × 10¹⁶ to 4 × 10¹⁷ cm⁻² were used to create defects in fused silica glass before introducing Si atoms in the substrate. Si was introduced in the substrates by ion beam mixing using 30keV Ar⁺ ions at fluence 1 × 10¹⁷ cm⁻². From UV-Vis absorption spectra, band-gap of Si-nc has been determined for samples prepared at different ion beam-mixing parameters. The absorption edge shifts towards higher energies and size of the silicon nanoclusters decreases with an increase in ion beam fluence used for pre-mixing irradiation.