Silicon Nanocluster Prepared Using Ion Beam Mixing Technique
In this work, we present the results of modification of absorption band gap of Silicon nanoclusters (Si-nc) prepared by ion beam mixing on pre-irradiated fused silica. 30keV Ar+ ions at fluences of 5 × 1016 to 4 × 1017 cm−2
were used to create defects in fused silica glass before introducing Si atoms in the substrate. Si was introduced in the substrates by ion beam mixing using 30keV Ar+ ions at fluence 1 × 1017 cm−2. From UV-Vis absorption spectra, band-gap of Si-nc
has been determined for samples prepared at different ion beam-mixing parameters. The absorption edge shifts towards higher energies and size of the silicon nanoclusters decreases with an increase in ion beam fluence used for pre-mixing irradiation.
Keywords: SI-NANOCLUSTERS; UV-VISIBLE SPECTROSCOPY
Document Type: Research Article
Publication date: 01 August 2008
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