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Memristor Modeling and Analysis for Linear Dopant Drift Kinetics

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The memristor technology is getting increased attention from introduction of first TiO2 based Memristive structure by HP labs, though the concept introduced long back in 1970 by Professor Chua. In this work, first we explain working of TiO2 based Memristor and then modeling of memristor in MATLAB for understanding the frequency and voltage magnitude relationship for full length travel of boundary between doped and undoped layer. With aid of this model, we examined current–voltage characteristics and flux dependence of two-terminal memristive devices, which concludes that required Flux for Full Length Boundary Movement depends only upon physical parameters of memristor; like core length and dopant ion mobility.
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Keywords: LINEAR DOPANT; MEMRISTOR; MEMRISTOR MODEL; NANOTECHNOLOGY; STATE VARIABLE

Document Type: Research Article

Publication date: 2016-12-01

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  • Journal of Nanoengineering and Nanomanufacturing is a multidisciplinary peer-reviewed international journal consolidating research activities in all experimental and theoretical aspects of nanoscale engineering and manufacturing science into a single and unique reference source. The main aim of this journal is to provide an international forum for scientists, engineers, researchers, and academicians working in the field of nanoscale science and engineering, nanomanufacturing science, processing technology and applications.
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