Profile Design Optimization of SiGe Heterojunction Bipolar Transistors for High Speed Applications
This paper presents two novel Ge profiles, Graded Double Box (GDB) and Graded Step Box (GSB) for the design of a SiGe HBT for high speed applications. Main objective of this work is to optimize the performance of HBT. For the proposed profiles and their impact on the two key parameters, current gain and the speed of the transistor, has been investigated analytically. The model is subsequently used to compare its performance with that of the conventional commercially available one. Consistent with the reported results it is expected that the GDB and GSB are optimized profile designs for high speed applications of the device.
Keywords: GDB; GE; GSB; HBTS; SI; SIGE
Document Type: Research Article
Publication date: 01 November 2008
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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